IRF2807PBF
MOSFET N-CH 75V 82A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2807PBF is an N-Channel Power MOSFET designed for high-performance applications. This component offers a 75V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 82A at 25°C, with a maximum power dissipation of 230W (Tc). The low on-resistance (Rds On) is 13mOhm at 43A and 10V gate-source voltage (Vgs). Featuring a gate charge (Qg) of 160 nC at 10V and input capacitance (Ciss) of 3820 pF at 25V, it is optimized for efficient switching. The IRF2807PBF is housed in a TO-220AB package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This device is commonly utilized in industrial power supplies, automotive systems, and renewable energy applications requiring robust power handling.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3820 pF @ 25 V |