IRF2807L
MOSFET N-CH 75V 82A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2807L is an N-channel power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-to-Source Voltage (Vdss) of 75V and a Continuous Drain Current (Id) of 82A at 25°C. With a maximum power dissipation of 230W (Tc) and a low On-Resistance (Rds On) of 13mOhm @ 43A, 10V, it offers excellent conduction losses. The IRF2807L utilizes advanced HEXFET® technology for superior performance. Key parameters include a Gate Charge (Qg) of 160 nC @ 10V and Input Capacitance (Ciss) of 3820 pF @ 25V. It is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262) through-hole package, suitable for operation across a wide temperature range of -55°C to 175°C. This device finds application in power supplies, automotive, and industrial motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3820 pF @ 25 V |
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