IRF2805STRRPBF
MOSFET N-CH 55V 135A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF2805STRRPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-to-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 135A at 25°C (Tc). The low on-resistance is specified at 4.7mOhm maximum at 104A and 10V gate drive. With a maximum power dissipation of 200W (Tc), it is suitable for demanding power management solutions. The device is housed in a TO-263-3, D2PAK package, designed for surface mounting and supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 230 nC maximum at 10V and input capacitance (Ciss) of 5110 pF maximum at 25V. This MOSFET is utilized in industries such as industrial power supplies, automotive systems, and renewable energy applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 135A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 104A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
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