IRF2805SPBF
MOSFET N-CH 55V 135A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF2805SPBF. This device features a 55V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 135A at 25°C (Tc). The low on-resistance (Rds On) is specified at 4.7mOhm maximum at 104A and 10V gate-source voltage. Engineered for high-power switching applications, it offers a maximum power dissipation of 200W (Tc). The IRF2805SPBF utilizes a surface mount D2PAK (TO-263-3) package, facilitating efficient thermal management. Key parameters include a gate charge (Qg) of 230 nC max and input capacitance (Ciss) of 5110 pF max. Operating temperature range is -55°C to 175°C (TJ). This component is commonly found in industrial power supplies, automotive electronics, and high-current DC-DC converters.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 135A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 104A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
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