IRF2805LPBF
MOSFET N-CH 55V 135A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF2805LPBF, offers a 55V drain-source voltage and a continuous drain current of 135A at 25°C (Tc). This high-performance device features a low on-resistance of 4.7mOhm maximum at 104A and 10V Vgs, with a gate charge of 230nC maximum at 10V. The IRF2805LPBF is packaged in a TO-262-3 Long Leads (I2PAK, TO-262AA) through-hole configuration, supporting a maximum power dissipation of 200W (Tc). Its operating junction temperature range is -55°C to 175°C. This MOSFET is suitable for demanding applications in power supply, automotive, and industrial sectors requiring efficient power switching.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 135A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 104A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5110 pF @ 25 V |
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