IRF2804STRRPBF
MOSFET N-CH 40V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2804STRRPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 75A at 25°C. The robust construction allows for a maximum power dissipation of 300W (Tc). With a low on-resistance (Rds On) of 2mOhm at 75A and 10V, it minimizes conduction losses, making it suitable for power conversion, industrial motor control, and automotive systems. The device utilizes a D2PAK (TO-263-3, D2PAK) surface mount package for efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 240 nC at 10V and input capacitance (Ciss) of 6450 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
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