IRF2804STRR7PP
MOSFET N-CH 40V 160A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF2804STRR7PP is an N-Channel power MOSFET designed for high-current applications. This component features a Drain to Source Voltage (Vdss) of 40 V and a continuous Drain current (Id) of 160 A at 25°C, with a maximum power dissipation of 330 W (Tc). The low on-resistance (Rds On) of 1.6 mOhm at 160 A and 10 V gate drive voltage ensures efficient power transfer. Key parameters include a Gate Charge (Qg) of 260 nC at 10 V and Input Capacitance (Ciss) of 6930 pF at 25 V. The device is housed in a TO-263-7, D2PAK (6 Leads + Tab) surface mount package, supplied on tape and reel. Operating temperature range is -55°C to 175°C. This MOSFET is utilized in demanding power management, automotive, and industrial applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 25 V |