IRF2804LPBF
MOSFET N-CH 40V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF2804LPBF, offers a 40V drain-source breakdown voltage and continuous drain current capability of 75A at 25°C (Tc). This TO-262 package device features a low on-resistance of 2.3mOhm maximum at 75A and 10V Vgs, with a gate charge of 240nC maximum at 10V. The specified input capacitance (Ciss) is 6450pF maximum at 25V. With a maximum power dissipation of 300W (Tc), the IRF2804LPBF is suitable for applications requiring robust power handling. The device operates across a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |