IRF2804
MOSFET N-CH 40V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2804 is a 40V N-Channel power MOSFET designed for demanding applications. This component features a low on-resistance of 2.3mOhm at 75A and 10V Vgs, facilitating efficient power transfer. Its continuous drain current capability is 75A (Tc) with a maximum power dissipation of 330W (Tc). The device is housed in a TO-220AB package, suitable for through-hole mounting. Key parameters include a gate charge of 240nC at 10V and input capacitance of 6450pF at 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450 pF @ 25 V |
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