IRF250P224
MOSFET N-CH 250V 96A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ series N-Channel Power MOSFET, part number IRF250P224. This through-hole component features a 250 V drain-source voltage (Vdss) and a continuous drain current (Id) of 96 A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 12 mOhm at 58 A and 10 V gate-source voltage (Vgs). Designed for demanding applications, it provides a power dissipation of 313 W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 203 nC at 10 V and input capacitance (Ciss) of 9915 pF at 50 V. The TO-247-3 package (TO-247AC supplier device package) is suitable for high-power switching and motor control applications across various industrial sectors.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 203 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9915 pF @ 50 V |
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