IRF2204SPBF
MOSFET N-CH 40V 170A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF2204SPBF is an N-channel power MOSFET featuring a 40V drain-to-source voltage (Vdss). This component offers a continuous drain current of 170A at 25°C (Tc) and a maximum power dissipation of 200W (Tc). The on-resistance (Rds On) is specified at a maximum of 3.6mOhm when conducting 130A with a 10V gate-source voltage (Vgs). The device is housed in a TO-263-3, D2PAK package suitable for surface mounting. Key electrical characteristics include a gate charge (Qg) of 200 nC at 10V and an input capacitance (Ciss) of 5890 pF at 25V. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET is utilized in power supply designs, motor control, and industrial automation applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 130A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V |
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