IRF2204LPBF
MOSFET N-CH 40V 170A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF2204LPBF is a 40V N-Channel power MOSFET designed for high-current applications. It features a low Rds(on) of 3.6mOhm at 130A and 10V Vgs, enabling efficient power transfer and reduced thermal losses. With a continuous drain current capability of 170A (Tc) and a maximum power dissipation of 200W (Tc), this component is suitable for demanding power management tasks. Key electrical characteristics include a gate charge (Qg) of 200 nC at 10V and input capacitance (Ciss) of 5890 pF at 25V. The device operates within a temperature range of -55°C to 175°C and is housed in a TO-262-3 Long Leads package. This MOSFET is commonly employed in industrial power supplies, automotive applications, and high-power switching circuits.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 130A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V |
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