IRF200S234
MOSFET N-CH 200V 90A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRF200S234 is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-to-source voltage (Vdss) of 200 V and a continuous drain current (Id) of 90 A at 25°C (Tc). With a maximum power dissipation of 417 W (Tc) and a low on-resistance (Rds On) of 16.9 mOhm at 51 A and 10 V gate drive, the IRF200S234 offers efficient power handling. It operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 5V at 250µA. Key parameters include a gate charge (Qg) of 162 nC at 10 V and input capacitance (Ciss) of 6484 pF at 50 V. The device is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding thermal environments with an operating temperature range of -55°C to 175°C (TJ). This MOSFET is utilized in industrial power supplies, automotive systems, and power conversion circuits. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 16.9mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 417W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6484 pF @ 50 V |
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