IRF200P223
MOSFET N-CH 200V 100A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRF200P223. This device features a drain-to-source voltage of 200V and a continuous drain current of 100A at 25°C (Tc). With a maximum power dissipation of 313W (Tc), it offers a low on-resistance of 11.5mOhm at 60A and 10V. The IRF200P223 is packaged in a TO-247-3 (TO247AC) through-hole package, suitable for demanding applications in industrial power supplies, automotive systems, and renewable energy sectors. Key parameters include a gate charge of 102nC at 10V and input capacitance of 5094pF at 50V. It operates over a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5094 pF @ 50 V |
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