IRF200P222
MOSFET N-CH 200V 182A TO247ACManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies StrongIRFET™ MOSFET, Part Number IRF200P222. This N-Channel power MOSFET features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 182A at 25°C, with a maximum power dissipation of 556W. With a low on-resistance of 6.6mOhm at 82A and 10V Vgs, the IRF200P222 offers efficient power handling. Key parameters include a gate charge (Qg) of 203 nC at 10V and input capacitance (Ciss) of 9820 pF at 50V. Operating temperature ranges from -55°C to 175°C. The component is packaged in a TO-247-3 (TO-247AC) through-hole mount. This device is suitable for high-power applications in industrial, automotive, and energy systems.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 182A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 82A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 556W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 270µA |
| Supplier Device Package | TO-247AC |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 203 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9820 pF @ 50 V |
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