IRF200B211
MOSFET N-CH 200V 12A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET®, StrongIRFET™ N-Channel Power MOSFET, part number IRF200B211, offers a 200V drain-to-source voltage (Vdss) and a continuous drain current of 12A (Tc). This through-hole component, packaged in a TO-220AB, features a maximum on-resistance (Rds On) of 170mOhm at 7.2A and 10V. With a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 790 pF at 50V, it is suitable for applications requiring robust switching performance. The device supports a maximum gate-to-source voltage (Vgs) of ±20V and operates across a wide temperature range of -55°C to 175°C (TJ). Power dissipation is rated at 80W (Tc). This component is utilized in industrial and power supply applications.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 50µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
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