IRF1902TRPBF
MOSFET N-CH 20V 4.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1902TRPBF is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20V. It offers a continuous drain current (Id) capability of 4.2A at 25°C and a maximum power dissipation of 2.5W. The Rds(On) is specified at 85mOhm maximum at 4A and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 7.5 nC maximum at 4.5V and an Input Capacitance (Ciss) of 310 pF maximum at 15V. This device supports drive voltages ranging from 2.7V to 4.5V and has a Vgs(th) of 700mV maximum at 250µA. The operating temperature range is -55°C to 150°C. Supplied in an 8-SOIC package, this component is typically used in industrial and consumer electronics applications. It is delivered in a Tape & Reel (TR) configuration.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 15 V |