IRF1902PBF
MOSFET N-CH 20V 4.2A 8SOManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1902PBF is a N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 4.2 A at 25°C with a maximum power dissipation of 2.5 W. The IRF1902PBF exhibits a low on-resistance (Rds On) of 85 mOhm at 4 A and 4.5 V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 7.5 nC at 4.5 V and an input capacitance (Ciss) of 310 pF at 15 V. It supports drive voltages from 2.7 V to 4.5 V and has a maximum gate-source voltage (Vgs) of ±12V. The device is housed in an 8-SOIC package (0.154", 3.90mm width) for surface mounting and operates across a temperature range of -55°C to 150°C. This MOSFET is commonly utilized in sectors such as industrial automation and consumer electronics.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 700mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 15 V |
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