IRF1704
MOSFET N-CH 40V 170A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1704 is a N-Channel Power MOSFET designed for high-current applications. This component features a drain-to-source voltage (Vdss) of 40 V and a continuous drain current (Id) of 170 A at 25°C. The device exhibits a low on-resistance (Rds On) of 4 mOhm at 100 A and 10 V gate-to-source voltage. With a maximum power dissipation of 230 W (Tc), it is suitable for demanding thermal environments. The IRF1704 utilizes a TO-220AB through-hole package, facilitating straightforward integration into printed circuit boards. Key electrical parameters include a gate charge (Qg) of 260 nC @ 10 V and input capacitance (Ciss) of 6950 pF @ 25 V. Operating temperature range is from -55°C to 200°C (TJ). This MOSFET is commonly employed in power supply units, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 25 V |
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