IRF1607
MOSFET N-CH 75V 142A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1607 is a high-performance N-Channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 142A at 25°C. With a low On-Resistance (Rds On) of 7.5mOhm at 85A and 10V, it offers efficient power handling. The maximum power dissipation is rated at 380W (Tc). Designed for through-hole mounting in a TO-220AB package, the IRF1607 is suitable for demanding applications across industries such as automotive, industrial power control, and power supplies. Key parameters include a Gate Charge (Qg) of 320 nC at 10V and an Input Capacitance (Ciss) of 7750 pF at 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 142A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7750 pF @ 25 V |
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