IRF150P221AKMA1
MOSFET N-CH 150V 186A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRF150P221AKMA1, offers a 150V drain-source voltage rating and a continuous drain current of 186A at 25°C (Tc). This TO-247-3 packaged device features a low on-resistance of 4.5mOhm (max) at 100A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 100nC (max) at 10V and input capacitance (Ciss) of 6000pF (max) at 75V. The device supports a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 4.6V (max) at 264µA. With a maximum power dissipation of 341W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the IRF150P221AKMA1 is suitable for demanding applications in industrial and automotive sectors.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 186A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 341W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 264µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 75 V |
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