IRF150P220XKMA1
MOSFET N-CH 150V 203A TO247-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ MOSFET, part number IRF150P220XKMA1, is an N-Channel power MOSFET designed for high-performance applications. This through-hole component features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 203A at 25°C. The device exhibits a low on-resistance (Rds On) of 2.7mOhm at 100A and 10V, coupled with a maximum power dissipation of 556W. Key parameters include a gate charge (Qg) of 200 nC at 10V and an input capacitance (Ciss) of 12000 pF at 75V. The operating temperature range is -55°C to 175°C. This device is suitable for industrial automation, power supply, and automotive applications. It is supplied in a PG-TO247-3 package.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 203A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 556W (Tc) |
| Vgs(th) (Max) @ Id | 4.6V @ 265µA |
| Supplier Device Package | PG-TO247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 75 V |
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