IRF1503STRRPBF
MOSFET N-CH 30V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1503STRRPBF is an N-channel power MOSFET designed for high-current applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C. The low on-resistance is specified at 3.3mOhm maximum at 140A and 10V gate-source voltage. The device offers a maximum power dissipation of 200W (Tc) and operates across a wide temperature range of -55°C to 175°C. It is supplied in a TO-263-3, D2PAK surface mount package, suitable for automated assembly. Key electrical characteristics include a gate charge (Qg) of 200 nC maximum at 10V and input capacitance (Ciss) of 5730 pF maximum at 25V. This MOSFET finds application in power supply design, motor control, and automotive systems. It is delivered in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5730 pF @ 25 V |
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