IRF1503SPBF
MOSFET N-CH 30V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1503SPBF is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 75A at 25°C, with a low on-resistance of 3.3mOhm at 140A and 10V gate drive. The IRF1503SPBF offers a maximum power dissipation of 200W (Tc) and a high continuous current capability, making it suitable for power management, automotive, and industrial motor control systems. Its D2PAK surface mount package (TO-263-3, D2PAK) ensures efficient thermal performance. Key electrical characteristics include a gate charge (Qg) of 200 nC @ 10V and input capacitance (Ciss) of 5730 pF @ 25V. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5730 pF @ 25 V |
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