IRF1407STRRPBF
MOSFET N-CH 75V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF1407STRRPBF is an N-channel power MOSFET designed for high-current applications. This device features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C (Tc). The ultra-low on-resistance (Rds(on)) of 7.8mOhm at 78A and 10V gate drive voltage (Vgs) minimizes conduction losses. With a maximum gate charge (Qg) of 250nC at 10V, it offers efficient switching characteristics. The MOSFET boasts a high power dissipation capability of 200W at 25°C (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Packaged in a D2PAK (TO-263-3) surface-mount configuration and supplied on tape and reel, the IRF1407STRRPBF is suitable for demanding applications in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
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