IRF1407STRR
MOSFET N-CH 75V 100A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF1407STRR is an N-Channel power MOSFET designed for high-current applications. This component features a 75V drain-source voltage and a continuous drain current capability of 100A at 25°C case temperature. With a low on-resistance of 7.8mOhm maximum at 78A and 10V gate-source voltage, it minimizes conduction losses. The device offers a maximum gate charge of 250 nC at 10V and an input capacitance of 5600 pF at 25V. Rated for a maximum power dissipation of 200W at the case and 3.8W at ambient temperature, it utilizes a D2PAK surface mount package (TO-263-3, D2PAK) for efficient thermal management. Operating across a temperature range of -55°C to 175°C, this MOSFET is suitable for automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 78A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
