IRF1405ZSTRRPBF
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1405ZSTRRPBF is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C (Tc). The low on-resistance, specified as 4.9mOhm maximum at 75A and 10V (Vgs), ensures efficient operation with minimal power loss. With a maximum power dissipation of 230W (Tc), this MOSFET is suitable for demanding power management tasks. The typical gate charge (Qg) is 180 nC at 10V (Vgs), and input capacitance (Ciss) is 4780 pF at 25V (Vds). This device is housed in a D2PAK (TO-263-3) surface-mount package, supplied on tape and reel. Its operating temperature range is -55°C to 175°C (TJ). The IRF1405ZSTRRPBF finds application in industries such as automotive, industrial power control, and renewable energy systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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