IRF1405ZSTRL7PP
MOSFET N-CH 55V 120A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1405ZSTRL7PP is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). The low on-resistance (Rds On) of 4.9mOhm at 88A and 10V gate drive voltage, coupled with a gate charge (Qg) of 230nC at 10V, ensures minimal conduction and switching losses. Its robust design includes a maximum gate-source voltage (Vgs) of ±20V and an operating temperature range of -55°C to 175°C. The D2PAK (TO-263-7) surface mount package is suitable for automated assembly. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive applications requiring high current handling and thermal performance.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 88A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5360 pF @ 25 V |
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