IRF1405ZS
MOSFET N-CH 55V 75A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1405ZS is an N-channel power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 75A at 25°C. The low on-resistance of 4.9mOhm is achieved at 75A and 10V gate drive, with a maximum Gate Charge (Qg) of 180 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 4780 pF at 25V. With a maximum power dissipation of 230W at 25°C, this device is suitable for demanding power management tasks. The surface mount D2PAK (TO-263-3, D2PAK) package facilitates efficient thermal management and board integration. It operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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