IRF1405ZL
MOSFET N-CH 55V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1405ZL is an N-Channel Power MOSFET designed for high-current switching applications. This component features a continuous drain current capability of 75A (Tc) at 25°C and a drain-to-source voltage (Vdss) of 55V. The low on-resistance of 4.9mOhm at 75A and 10V gate-source voltage, coupled with a maximum power dissipation of 230W (Tc), makes it suitable for demanding power conversion and management tasks. Key parameters include a gate charge (Qg) of 180 nC @ 10V and an input capacitance (Ciss) of 4780 pF @ 25V. The device is housed in a TO-262-3 Long Leads package for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is commonly found in industrial automation, automotive systems, and power supplies.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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