IRF1405Z
MOSFET N-CH 55V 75A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1405Z is an N-channel power MOSFET with a drain-source voltage of 55 V. This through-hole component in a TO-220AB package offers a continuous drain current of 75 A at 25°C and a maximum power dissipation of 230 W. The IRF1405Z features a low on-resistance of 4.9 mOhm at 75 A and 10 V gate drive. Key parameters include a gate charge of 180 nC at 10 V and input capacitance of 4780 pF at 25 V. Designed for high-efficiency switching applications, this MOSFET is suitable for use in automotive, industrial, and power supply systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4780 pF @ 25 V |
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