IRF1405SPBF
MOSFET N-CH 55V 131A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF1405SPBF. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 131A at 25°C (Tc). The IRF1405SPBF offers a low on-resistance of 5.3mOhm maximum at 101A and 10V gate drive. With maximum power dissipation of 200W (Tc), it is constructed using MOSFET technology and packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface mount configuration. Key parameters include a Gate Charge (Qg) of 260 nC at 10V and Input Capacitance (Ciss) of 5480 pF at 25V. It operates within a temperature range of -55°C to 175°C (TJ). This component is frequently utilized in automotive and industrial power control applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 131A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 101A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 25 V |
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