IRF1405LPBF
MOSFET N-CH 55V 131A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1405LPBF is an N-Channel Power MOSFET designed for high-current applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 131A at 25°C, with a maximum power dissipation of 200W (Tc). The low on-state resistance (Rds On) is 5.3mOhm at 101A and 10V, facilitated by a 10V gate drive. Key parameters include a Gate Charge (Qg) of 260 nC @ 10V and input capacitance (Ciss) of 5480 pF @ 25V. The device operates across a temperature range of -55°C to 175°C (TJ) and is housed in a TO-262-3 Long Leads package. This MOSFET is widely utilized in industrial power supplies, automotive applications, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 131A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 101A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5480 pF @ 25 V |
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