IRF1404ZSTRRPBF
MOSFET N-CH 40V 180A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® MOSFET, part number IRF1404ZSTRRPBF, is an N-channel power MOSFET with a Drain-Source Voltage (Vdss) of 40 V. This device offers a continuous drain current (Id) of 180 A at 25°C and a maximum power dissipation of 200 W (Tc). The on-resistance (Rds On) is a low 3.7 mOhm at 75 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 150 nC at 10 V and input capacitance (Ciss) of 4340 pF at 25 V. The device features a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage (Vgs(th)) of 4 V at 150 µA. Packaged in a D2PAK (TO-263-3) surface mount configuration and supplied on tape and reel, this MOSFET is suitable for applications in industrial and automotive power switching. It operates within an ambient temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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