IRF1404ZSPBF
MOSFET N-CH 40V 180A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1404ZSPBF offers a robust N-Channel MOSFET solution. This component features a drain-to-source breakdown voltage (Vdss) of 40 V and a continuous drain current (Id) of 180 A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 3.7 mOhm at 75 A and 10 V gate drive. With a maximum power dissipation of 200 W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for high-power applications. Key electrical characteristics include a gate charge (Qg) of 150 nC at 10 V and input capacitance (Ciss) of 4340 pF at 25 V. The IRF1404ZSPBF is packaged in a TO-263-3, D2PAK surface-mount configuration, making it ideal for demanding power switching in automotive, industrial power control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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