IRF1404ZGPBF
MOSFET N-CH 40V 180A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1404ZGPBF is an N-Channel power MOSFET designed for high-current switching applications. This TO-220AB package component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 180A at 25°C (Tc). With a low on-resistance (Rds On) of 3.7mOhm at 75A and 10V (Vgs), it ensures efficient power transfer. The device boasts a maximum power dissipation of 220W (Tc) and a gate charge (Qg) of 150 nC at 10V. Its through-hole mounting type and operating temperature range of -55°C to 175°C make it suitable for demanding environments in automotive, industrial, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 220W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 25 V |
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