IRF1404STRRPBF
MOSFET N-CH 40V 162A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1404STRRPBF is a N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) capability of 162A at 25°C (Tc). The Rds(On) is specified at a low 4mOhm maximum at 95A and 10V Vgs. With a Gate Charge (Qg) of 200nC at 10V, this device offers efficient switching characteristics. The input capacitance (Ciss) is rated at 7360pF maximum at 25V. Packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), it supports a maximum power dissipation of 200W at 25°C (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial power control, and high-power DC-DC converters.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 162A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7360 pF @ 25 V |
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