IRF1404SPBF
MOSFET N-CH 40V 162A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® IRF1404SPBF is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 162A at 25°C (Tc). With a low on-resistance (Rds On) of 4mOhm at 95A and 10V gate-source voltage (Vgs), it minimizes power loss. The device boasts a maximum gate charge (Qg) of 200 nC at 10V and an input capacitance (Ciss) of 7360 pF at 25V. Operating across a wide temperature range of -55°C to 175°C (TJ), it offers excellent thermal management with a maximum power dissipation of 200W (Tc). The IRF1404SPBF is housed in a TO-263-3, D2PAK package, suitable for surface mounting. This MOSFET is widely utilized in industrial power supplies, automotive systems, and high-current switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 162A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7360 pF @ 25 V |
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