IRF1404PBF
MOSFET N-CH 40V 202A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1404PBF is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) capability of 202A at 25°C (Tc), with a maximum power dissipation of 333W (Tc). The device exhibits a low on-resistance (Rds On) of 4mOhm at 121A and 10V, facilitated by a gate drive voltage of 10V. Key parameters include a gate charge (Qg) of 196 nC (Max) at 10V and input capacitance (Ciss) of 5669 pF (Max) at 25V. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is housed in a TO-220AB package. Its robust characteristics make it suitable for use in power supplies, automotive systems, and industrial motor control.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 202A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 121A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 333W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5669 pF @ 25 V |
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