IRF1404LPBF
MOSFET N-CH 40V 162A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRF1404LPBF, offers a 40V drain-source breakdown voltage and a continuous drain current capability of 162A at 25°C (Tc). This device features a low on-resistance of 4mOhm at 95A and 10V gate-source voltage, with a maximum gate charge of 200 nC @ 10 V. The input capacitance (Ciss) is specified at 7360 pF @ 25 V. Designed for high-power applications, this TO-262 package component supports through-hole mounting and operates across an extended temperature range of -55°C to 175°C (TJ). Maximum power dissipation is rated at 3.8W (Ta) and 200W (Tc). The IRF1404LPBF is suitable for use in automotive, industrial, and power supply applications demanding robust switching performance.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 162A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7360 pF @ 25 V |
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