IRF135SA204
MOSFET N-CH 135V 160A D2PAK-7Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel Power MOSFET, part number IRF135SA204, is engineered for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 135 V and a continuous drain current (Id) of 160 A at 25°C (Tc). With a low on-resistance (Rds On) of 5.9 mOhm maximum at 96 A and 10 V, it minimizes conduction losses. The device offers a high power dissipation capability of 500 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 315 nC at 10 V and input capacitance (Ciss) of 11690 pF at 50 V. The IRF135SA204 is housed in a TO-263-7, D2PAK-7 package, suitable for surface mounting. This component finds application in industrial power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), Variant |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 96A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK-7 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 135 V |
| Gate Charge (Qg) (Max) @ Vgs | 315 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11690 pF @ 50 V |
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