IRF135S203
MOSFET N-CH 135V 129A TO263-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET®, StrongIRFET™ IRF135S203 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-to-Source Voltage (Vdss) of 135V and a continuous drain current (Id) of 129A at 25°C, with a maximum power dissipation of 441W. The Rds(on) is specified at a low 8.4mOhm at 77A and 10V gate drive. With a typical gate charge (Qg) of 270 nC at 10V and input capacitance (Ciss) of 9700 pF at 50V, this device is suitable for demanding switching applications. The IRF135S203 is housed in a surface mount PG-TO263-3-2 package, often referred to as TO-263AB or D2PAK, and is supplied on tape and reel. Its robust construction and performance characteristics make it a reliable choice for industrial power supplies, electric vehicle systems, and renewable energy inverters.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 77A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 441W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 135 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 50 V |
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