IRF135B203
MOSFET N-CH 135V 129A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies StrongIRFET™ N-Channel MOSFET, part number IRF135B203, offers a 135V drain-source breakdown voltage and a continuous drain current capability of 129A at 25°C (Tc). This device features a low on-resistance of 8.4mOhm maximum at 77A and 10V gate-source voltage, with a maximum power dissipation of 441W (Tc). The gate charge is specified at 270 nC maximum at 10V, and input capacitance (Ciss) is 9700 pF maximum at 50V. Designed for through-hole mounting in a PG-TO220-3 package, the IRF135B203 operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for demanding applications in power management, industrial control, and automotive sectors.
Additional Information
Series: StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 129A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 77A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 441W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 135 V |
| Gate Charge (Qg) (Max) @ Vgs | 270 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9700 pF @ 50 V |
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