IRF1324STRL-7PP
MOSFET N-CH 24V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1324STRL-7PP is an N-Channel Power MOSFET designed for high-current, high-efficiency applications. This device features a low on-resistance of 1mOhm at 160A and 10V Vgs, facilitating minimal conduction losses. With a continuous drain current rating of 240A (Tc) and a drain-source voltage of 24V, it is suitable for demanding power management tasks. The MOSFET offers a maximum power dissipation of 300W (Tc) and a wide operating temperature range from -55°C to 175°C. Its D2PAK (7-Lead) surface mount package (TO-263-7, D2PAK) ensures robust thermal performance. Key parameters include a gate charge (Qg) of 252 nC @ 10V and input capacitance (Ciss) of 7700 pF @ 19V. This component is utilized in industries such as automotive and industrial power control.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 252 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 19 V |