IRF1324SPBF
MOSFET N-CH 24V 195A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1324SPBF is an N-channel power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 24V and a continuous Drain Current (Id) of 195A at 25°C. The device offers a low on-resistance (Rds On) of 1.65mOhm at 195A and 10V gate drive, coupled with a maximum power dissipation of 300W. Key parameters include a Gate Charge (Qg) of 240 nC and an Input Capacitance (Ciss) of 7590 pF. The IRF1324SPBF is housed in a TO-263-3, D2PAK surface-mount package, suitable for demanding thermal management. Operating temperature ranges from -55°C to 175°C. This MOSFET is utilized in industries such as industrial automation and power supply systems requiring robust performance.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.65mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7590 pF @ 24 V |
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