IRF1324S-7PPBF
MOSFET N-CH 24V 240A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF1324S-7PPBF is a N-Channel Power MOSFET designed for high-current applications. This component features a drain-source voltage (Vdss) of 24 V and a continuous drain current (Id) of 240 A at 25°C (Tc). With a low on-resistance (Rds On) of 1 mOhm at 160 A and 10 V, it offers efficient power handling, dissipating up to 300 W (Tc). The device is packaged in a D2PAK (7-Lead) surface-mount package, facilitating integration into compact designs. Key electrical characteristics include a gate charge (Qg) of 252 nC at 10 V and input capacitance (Ciss) of 7700 pF at 19 V. This MOSFET is suitable for demanding power conversion and management systems across various industrial sectors. It operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 1mOhm @ 160A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK (7-Lead) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 252 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7700 pF @ 19 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
