IRF1324PBF
MOSFET N-CH 24V 195A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRF1324PBF is a N-Channel Power MOSFET designed for high-current applications. This component features a 24V drain-source breakdown voltage and a continuous drain current rating of 195A at 25°C, with a maximum power dissipation of 300W. The ultra-low on-resistance of 1.5mOhm at 195A and 10V gate drive voltage minimizes conduction losses. Key parameters include a gate charge of 240nC and input capacitance of 7590pF at 24V. The TO-220AB package with through-hole mounting is suitable for demanding thermal management. Operating temperature range is -55°C to 175°C. This MOSFET is utilized in sectors such as industrial power supplies, automotive electronics, and electric vehicle systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7590 pF @ 24 V |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
