IRF1324LPBF
MOSFET N-CH 24V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® series N-Channel Power MOSFET, part number IRF1324LPBF. This device features a 24V drain-source voltage (Vdss) and a continuous drain current (Id) of 195A at 25°C. The IRF1324LPBF offers a low on-resistance (Rds On) of 1.65mOhm at 195A and 10V gate-source voltage, with a maximum gate charge of 240 nC at 10V. It is rated for 300W maximum power dissipation and operates within a temperature range of -55°C to 175°C. The component is housed in a TO-262 package with through-hole mounting. This MOSFET is suitable for applications in automotive, industrial power control, and high-current switching systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.65mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7590 pF @ 24 V |
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