IRF1312PBF
MOSFET N-CH 80V 95A TO220ABManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1312PBF is an N-channel power MOSFET designed for demanding applications. This component features a 80V drain-to-source voltage (Vdss) and a continuous drain current capability of 95A at 25°C (Tc). The low on-resistance (Rds On) of 10mOhm at 57A and 10V gate drive voltage ensures efficient power transfer. With a maximum gate charge (Qg) of 140 nC at 10V and an input capacitance (Ciss) of 5450 pF at 25V, it offers robust switching characteristics. The device is housed in a TO-220AB package, suitable for through-hole mounting, and boasts a maximum power dissipation of 210W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is utilized in industries such as industrial automation, power supplies, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 57A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 210W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5450 pF @ 25 V |
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