IRF1310NSTRR
MOSFET N-CH 100V 42A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRF1310NSTRR is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 42A at 25°C (Tc). With a low on-resistance (Rds On) of 36mOhm maximum at 22A and 10V Vgs, it minimizes conduction losses. The device is housed in a TO-263-3, D2PAK package for efficient surface mounting and thermal management, supporting a maximum power dissipation of 160W (Tc). Key electrical parameters include a Gate Charge (Qg) of 110 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 1900 pF maximum at 25V Vds. Operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for use in industrial, automotive, and power supply sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
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